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Substrate effects on the formation of flat Ag films on (110) surfaces of III-V compound semiconductors

Identifieur interne : 013C77 ( Main/Repository ); précédent : 013C76; suivant : 013C78

Substrate effects on the formation of flat Ag films on (110) surfaces of III-V compound semiconductors

Auteurs : RBID : Pascal:99-0383095

Descripteurs français

Pascal (Inist)
- 6855, 6116C, 6114H, Etude expérimentale, Argent, Substrat, Couche mince, Diffraction électron, Microscopie électronique, Gallium arséniure, Indium phosphure, Gallium antimoniure, Croissance, STM, LEED, Interface métal semiconducteur, Semiconducteur III-V, Couche mince métallique, Recuit.
Wicri :
- concept : Argent.

English descriptors

KwdEn :
- Annealing, Electron diffraction, Electron microscopy, Experimental study, Gallium antimonides, Gallium arsenides, Growth, III-V semiconductors, Indium phosphides, LEED, Metallic thin films, STM, Semiconductor-metal boundaries, Silver, Substrates, Thin films.

Abstract

Ag films grown at 135 K on (110) surfaces of III-V compound semiconductors and annealed at room temperature are investigated by scanning tunneling microscopy and low-energy electron diffraction. Ag films on Ga-V semiconductors are well ordered, atomically flat, and exhibit a specific critical thickness, which is a function of the substrate material. Films grown on In-V semiconductors are still rather flat, but significantly more disordered. The (111) oriented Ag films on III-arsenides and III-phosphides exhibit a clear twofold superstructure. Films on III-antimonides exhibit threefold low-energy electron diffraction images. The morphology of the Ag films can be explained on the basis of the electronic growth mechanism.

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Pascal:99-0383095

Le document en format XML

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<author><name sortKey="Chao, K J" uniqKey="Chao K">K.-J. Chao</name>
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<author><name sortKey="Zhang, Zhenyu" uniqKey="Zhang Z">Zhenyu Zhang</name>
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<author><name sortKey="Ebert, Ph" uniqKey="Ebert P">Ph. Ebert</name>
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<author><name sortKey="Shih, C K" uniqKey="Shih C">C. K. Shih</name>
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<term>Gallium arsenides</term>
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<term>LEED</term>
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<term>Couche mince</term>
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<front><div type="abstract" xml:lang="en">Ag films grown at 135 K on (110) surfaces of III-V compound semiconductors and annealed at room temperature are investigated by scanning tunneling microscopy and low-energy electron diffraction. Ag films on Ga-V semiconductors are well ordered, atomically flat, and exhibit a specific critical thickness, which is a function of the substrate material. Films grown on In-V semiconductors are still rather flat, but significantly more disordered. The (111) oriented Ag films on III-arsenides and III-phosphides exhibit a clear twofold superstructure. Films on III-antimonides exhibit threefold low-energy electron diffraction images. The morphology of the Ag films can be explained on the basis of the electronic growth mechanism.</div>
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Substrate effects on the formation of flat Ag films on (110) surfaces of III-V compound semiconductors

Substrate effects on the formation of flat Ag films on (110) surfaces of III-V compound semiconductors

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri